Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Quantum sensing and quantum communication systems rely on high-performance single- or entangled-photon sources and single-photon detectors enabling experiments based on the quantum nature of single photons. In this contribution, we discuss the development of an entangled-photon source delivering entangled photon pairs with wavelengths of about 1550 nm alongside with single-photon avalanche detectors (SPADs) for the short-wave infrared (SWIR) and for the extended SWIR (eSWIR) spectral range. The fabrication processes of such quantum-enabling technologies is highlighted. The entangled-photon source is based on AlGaAs Bragg-reflection waveguides. Very low difference in effective refractive index of TE and TM polarized photons - important for high polarization entanglement without external compensation - as well as high single and coincidence count rates were achieved. For the fabrication of InGaAs/InP SWIR SPADs, the key technology is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed, achieving the intended double-well diffusion profile. Experimental data of thus fabricated InGaAs/InP SPADs show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operation as well as breakthrough behavior in Geiger-mode operation at 240 K, which is a typical operating temperature for InGaAs/InP SPADs achievable by thermoelectric cooling. GaSb-based SPADs for the eSWIR are fabricated in a mesa approach showing the expected dark current behavior as well. All three different devices are linked by enabling quantum technologies in the (e)SWIR as well as by using our III/V-semiconductor technology facilities.