PLASMA-ASSISTED VAPOUR THERMAL DEPOSITION WITH CONTINUOUS MATERIAL FEED

被引:0
|
作者
Kousal, Jaroslav [1 ]
Krtous, Zdenek [1 ]
Solar, Pavel [1 ]
Krivka, Ivo [1 ]
Krakovsky, Ivan [1 ]
机构
[1] Charles Univ Prague, Fac Math & Phys, Prague, Czech Republic
关键词
Plasma polymer; plasma assisted vapour thermal deposition; continuous process; polylactic acid; POLYMER-FILMS; DEGRADATION;
D O I
10.37904/nanocon.2022.4579
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The Plasma-Assisted Vapour Thermal Deposition ( PAVTD) is thin-film deposition technique utilizing a classical polymer as a source of material. The polymer is heated to fragmentation/evaporation under low pressure. The released fragments (effective a "monomer") with molar mass of 10(2) to 10(3) g/mol are then repolymerized in the rf plasma. The high molar mass of the film building blocks offers an opportunity to tune the structure and properties of the films in an exceptionally broad range for a plasma polymer, effectively bridging the gap between classical polymers and PECVD films. Currently, the PAVTD method has several drawbacks compared with PECVD. The deposition must be done as a batch process, governed by the capacity of the crucible. The thermal release of the precursor fragments is highly temperature-and history-sensitive. The resulting fluctuations in deposition rate make retaining good reproducibility of the process rather tricky. To overcome these technical limitations, a modification of the setup utilizing a filament for FDM 3D-printing fed into a modified filament heater/extruder was made. In this paper, overview of the possibilities of PAVTD using PLA as the source material will is given along with the first results obtained using an improved deposition setup with continuous material feed. Significant improvements in deposition rate and control of stability of the deposition are presented.
引用
收藏
页码:261 / 266
页数:6
相关论文
共 50 条
  • [21] Preparation of CNx-phases using plasma-assisted and hot filament chemical vapour deposition
    Leonhardt, A
    Gruger, H
    Selbmann, D
    Arnold, B
    Thomas, J
    THIN SOLID FILMS, 1998, 332 (1-2) : 69 - 73
  • [22] Effect of Accelerated Ageing on Ballistic Textiles Modified By Plasma-Assisted Chemical Vapour Deposition (PACVD)
    Struszczyk, Marcin H.
    Puszkarz, Adam K.
    Miklas, Michal
    Wilbik-Halgas, Bozena
    Cichecka, Magdalena
    Urbaniak-Domagala, Wieslawa
    Krucinska, Izabella
    FIBRES & TEXTILES IN EASTERN EUROPE, 2016, 24 (01) : 83 - 88
  • [23] Plasma-assisted deposition of nanostructured films and coatings
    Girshick, SL
    PROGRESS IN PLASMA PROCESSING OF MATERIALS 1999, 1999, : 607 - 612
  • [24] Gas heating in plasma-assisted sputter deposition
    Palmero, A
    Rudolph, H
    Habraken, FHPM
    APPLIED PHYSICS LETTERS, 2005, 87 (07)
  • [25] Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition
    Sugino, T
    Maeda, M
    Kawarai, K
    Shirafuji, J
    JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 628 - 630
  • [26] Corrosion resistance of multi-layered plasma-assisted physical vapour deposition TiN and CrN coatings
    Liu, C
    Leyland, A
    Bi, Q
    Matthews, A
    SURFACE & COATINGS TECHNOLOGY, 2001, 141 (2-3): : 164 - 173
  • [27] BLUE AND GREEN CATHODOLUMINESCENCE OF SYNTHESIZED DIAMOND FILMS FORMED BY PLASMA-ASSISTED CHEMICAL VAPOUR DEPOSITION.
    Kawarada, Hiroshi
    Nishimura, Kazuhito
    Ito, Toshimichi
    Suzuki, Jun-ichi
    Mar, King-Sheng
    Yokota, Yoshihiro
    Hiraki, Akio
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (04): : 683 - 686
  • [28] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS AND GASB
    HARIU, T
    MATSUSHITA, K
    KOMATSU, Y
    SHIBUYA, S
    IGARASHI, S
    SHIBATA, Y
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 141 - 148
  • [29] PLASMA-ASSISTED DEPOSITION OF NANOSTRUCTURED FILMS AND COATINGS
    Girshick, Steven L.
    HIGH TEMPERATURE MATERIAL PROCESSES, 2011, 15 (04): : 293 - 298
  • [30] PLASMA-ASSISTED DEPOSITION AT ATMOSPHERIC-PRESSURE
    SALGE, J
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 583 - 592