Analytical Model of Dark Count Rate in Single-Photon Avalanche Diodes

被引：0

作者：

Eyvazi, Kaveh ^{[1
]}

Shojaee, Fatemeh ^{[1
]}

Ratti, Lodovico ^{[2
,3
]}

Karami, Mohammad Azim ^{[1
]}

机构：

[1] Iran Univ Sci & Technol IUST, Sch Elect Engn, Tehran 1684613114, Iran

[2] Univ Pavia, Dept Elect Comp & Biomed Engn, I-27100 Pavia, Italy

[3] Italian Natl Inst Nucl Phys INFN, I-27100 Pavia, Italy

来源：

IEEE SENSORS JOURNAL | 2024年 / 24卷 / 03期

关键词：

Single-photon avalanche diodes; Tunneling; Electron traps; Electric fields; Analytical models; Silicon; Doping profiles; Analytical model; dark count rate (DCR); nonlocal model; single-photon avalanche diode (SPAD);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, an analytical model is proposed for the dark count rate (DCR) of single-photon avalanche diodes (SPADs), including a nonlocal model for tunneling rate calculation instead of a local one. The nonlocal tunneling model takes into account the change in the electric field over the tunneling path by means of a triangularly shaped potential barrier. For SPADs implemented in 150- and 180-nm standard CMOS technologies, as far as DCR is concerned, the nonlocal model is shown to be in better agreement with the reported experimental results in comparison with the local tunneling model.

引用

页码：2960 / 2966

页数：7

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