AVALANCHE RELAXATION OSCILLATIONS OBSERVED IN THE PLANAR GUNN DEVICE

被引：0
|
作者：
王守武
郑一阳
刘朝中
机构：
[1] Institute of Semiconductors
[2] Academia Sinica
[3] Academia
来源：
ScienceinChina,SerA. | 1975年 / Ser.A.1975卷 / 06期
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摘要：
<正> Avalanche relaxation oscillations have been observed when the voltage applied to aplanar Gunn device wtth rather short active region is several times its threshold voltage.The oscillation is associated with the alternative existence of the avalanche in the highfield domain and the recombination and extraction of the electron-hole pairs in the activeregion. The amplitude of this oscillation is much larger than that of the Gunn oscilla-tion, while the frequency is several times lower than the Gunn oscillation frequency, andis very much affected by the parameters of the external circuit. In the event of a goodimpedance matching, a total efficiency of about 36% is obtained.
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页码：735 / 744
页数：10
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