Gunn, Avalanche and Baritt Microwave Amplifiers.

被引：0

作者：

Constant, E.

Carnez, B.

机构：

来源：

| 1600年 / 56期

关键词：

SEMICONDUCTOR DIODES; GUNN - SEMICONDUCTOR DIODES; IMPATT;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Negative resistance amplifier using Gunn, Avalanche and Baritt diodes are studied. First, the semiconductor structures used are described and their microwave properties are briefly analyzed. Then a survey of current possibilities in these three kinds of amplifiers is given: bandwidth, microwave efficiency and power, linearity AM-PM conversion and noise.

引用

页码：8 / 9

共 50 条

[1] WAVEGUIDE CAVITY GUNN AMPLIFIERS.
Sweet, A.A.
1600, (15):
[2] SYNTHESIS OF MICROWAVE AMPLIFIERS.
Portnov, N.A.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1981, 35-36 (03): : 48 - 51
[3] Method for Approximate Estimation of Noise Figure in Gunn Amplifiers.
Vorob'ev, Yu.P.
Savel'ev, V.Ya.
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1980, 23 (10): : 20 - 23
[4] QUANTUM PROPERTIES OF PARAMETRIC MICROWAVE AMPLIFIERS.
Kuz'min, L.S.
Likharev, K.K.
Migulin, V.V.
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1984, 29 (02): : 115 - 123
[5] INVESTIGATION OF THE NOISE CHARACTERISTICS OF MULTISTAGE MICROWAVE AMPLIFIERS.
Tolstoi, A.I.
1600, (32-33):
[6] ERROR CONSIDERATIONS IN THE DESIGN OF MICROWAVE TRANSISTOR AMPLIFIERS.
Scanlan, Sean O.
Young, George P.
IEEE Transactions on Microwave Theory and Techniques, 1980, MTT-28 (11 pt 1) : 1163 - 1169
[7] AVALANCHE AND GUNN-EFFECT MICROWAVE OSCILLATORS
GIBBONS, G
MINDEN, HT
SOLID STATE TECHNOLOGY, 1970, 13 (02) : 37 - +
[8] MICROWAVE SOLID-STATE INJECTION LOCKED AMPLIFIERS.
Day, Walter R.
Lindgren, Gary E.
Peterson, Charles C.
Microwave Journal, 1976, 19 (05) : 59 - 63
[9] COMPUTER AIDED SYNTHESIS OF BROADBAND MICROWAVE PARAMETRIC AMPLIFIERS.
Tauritz, Joseph L.
1974, : 565 - 575
[10] IMPATT DIODES START COMPETING AS MICROWAVE SYSTEM AMPLIFIERS.
Bowers, H.C.
1600, (45):

← 1 2 3 4 5 →