Piezoresistive effect in p-type polycrystalline diamond films

被引：0
|
作者：
方亮
王万录
廖克俊
丁培道
王健
机构：
来源：
ScienceinChina,SerA. | 1999年 / Ser.A.1999卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O484.4 [薄膜的性质];
学科分类号：
摘要：
<正> The piezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible for the piezoresistive effect in the p-type polycrystalline diamond films. The gauge-factor calculation formula including the effect of both background scattering and grain-boundary scattering were obtained, and the calculation results are in accordance with the experimental results.
引用
收藏
页码：769 / 777
页数：9
相关论文
共 50 条
  • [41] The theoretical studies of piezoresistive effect in diamond films
    Chunyang Kong
    Wanlu Wang
    Kejun Liao
    Yong Ma
    Shuxia Wang
    Liang Fang
    Science in China Series A: Mathematics, 2002, 45 (1): : 107 - 114
  • [42] The theoretical studies of piezoresistive effect in diamond films
    孔春阳
    廖克俊
    方亮
    马勇
    王万录
    王蜀霞
    Science China Mathematics, 2002, (01) : 107 - 114
  • [43] The theoretical studies of piezoresistive effect in diamond films
    Kong, CY
    Wang, WL
    Liao, KJ
    Ma, Y
    Wang, SX
    Fang, L
    SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 45 (01): : 107 - 114
  • [44] Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films
    Hoang-Phuong Phan
    Dzung Viet Dao
    Tanner, Philip
    Han, Jisheng
    Nam-Trung Nguyen
    Dimitrijev, Sima
    Walker, Glenn
    Wang, Li
    Zhu, Yong
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (35) : 7176 - 7179
  • [45] Stress-dependent hole effective masses and piezoresistive properties of p-type monocrystalline and polycrystalline silicon
    Kleimann, P
    Semmache, B
    Le Berre, M
    Barbier, D
    PHYSICAL REVIEW B, 1998, 57 (15): : 8966 - 8971
  • [46] High resolution Laplace deep level transient spectroscopy of p-type polycrystalline diamond
    Mitromara, N.
    Evans-Freeman, J. H.
    Gaedtke, C.
    May, P. W.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (09): : 2184 - 2189
  • [47] Cold Cathode of p-Type Semiconducting Diamond Films for Gas Discharge
    Hatta, Akimitsu
    Nakatsuma, Hiroshi
    Yanai, Keishi
    Nishikawa, Tsuyoshi
    PLASMA PROCESSES AND POLYMERS, 2007, 4 : S942 - S945
  • [48] A theoretical calculation of the piezoresistivity and magnetoresistivity in p-type semiconducting diamond films
    Kong, CY
    Wang, WL
    Liao, KJ
    Wang, SX
    Fang, L
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (08) : 1765 - 1774
  • [49] Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains
    Kozlovskiy, S. I.
    Sharan, N. N.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2011, 10 (1-2) : 258 - 267
  • [50] Experimental Investigation of Piezoresistive Effect in p-Type 4H-SiC
    Tuan-Khoa Nguyen
    Hoang-Phuong Phan
    Toan Dinh
    Han, Jisheng
    Dimitrijev, Sima
    Tanner, Philip
    Foisal, Abu Riduan Md
    Zhu, Yong
    Nam-Trung Nguyen
    Dzung Viet Dao
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (07) : 955 - 958
12345