Piezoresistive effect in p-type polycrystalline diamond films

被引：0
|
作者：
方亮
王万录
廖克俊
丁培道
王健
机构：
来源：
ScienceinChina,SerA. | 1999年 / Ser.A.1999卷 / 07期
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中图分类号：
O484.4 [薄膜的性质];
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摘要：
<正> The piezoresistive effect of boron-doped polycrystalline diamond films was analyzed and discussed by the famous M-S polycrystalline model. It is found that the valence bands splitting-off and the grain-boundary scattering are the main factors responsible for the piezoresistive effect in the p-type polycrystalline diamond films. The gauge-factor calculation formula including the effect of both background scattering and grain-boundary scattering were obtained, and the calculation results are in accordance with the experimental results.
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页码：769 / 777
页数：9
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