Isomeric Dibenzoheptazethrenes for Air-Stable Organic Field-Effect Transistors

被引:0
|
作者
Zong, Chaoyang [1 ]
Zhu, Xiaoting [2 ,3 ,4 ]
Xu, Zhanqiang [1 ]
Zhang, Lifeng [1 ]
Xu, Jun [5 ]
Guo, Jing [6 ]
Xiang, Qin [1 ]
Zeng, Zebing [6 ]
Hu, Wenping [2 ,3 ]
Wu, Jishan [2 ,4 ]
Li, Rongjin [3 ]
Sun, Zhe [1 ]
机构
[1] Institute of Molecular Plus, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin university, 92 Weijin Road, Tianjin,300072, China
[2] Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou,350207, China
[3] Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, 92 Weijin Road, Tianjin,300072, China
[4] Department of Chemistry, National University of Singapore, Singapore,117543, Singapore
[5] Health Science Platform, Tianjin University, 92 Weijin Road, Tianjin,300072, China
[6] State Key Laboratory of Chemo/Biosensing and Chemometrics, Center for Aggregation-Induced Emission, College of Chemistry and Chemical Engineering, Hunan University, Changsha,410082, China
关键词
Polycyclic aromatic hydrocarbons - Aromatization - Paramagnetic resonance - Single crystals - Organic field effect transistors - Hole mobility;
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摘要
Singlet diradicaloids hold great potential as semiconductors for organic field-effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet–triplet gap, as corroborated by variable-temperature electron paramagnetic resonance spectra, single-crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm2 V−1 s−1, which is the highest for zethrene-based semiconductors. Both isomers exhibited remarkable material stability in air-saturated solutions as well as excellent bias-stress and storage stability in device under ambient air. © 2021 Wiley-VCH GmbH
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页码:16230 / 16236
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