Isomeric Dibenzoheptazethrenes for Air-Stable Organic Field-Effect Transistors

被引：0

作者：

Zong, Chaoyang ^{[1
]}

Zhu, Xiaoting ^{[2
,3
,4
]}

Xu, Zhanqiang ^{[1
]}

Zhang, Lifeng ^{[1
]}

Xu, Jun ^{[5
]}

Guo, Jing ^{[6
]}

Xiang, Qin ^{[1
]}

Zeng, Zebing ^{[6
]}

Hu, Wenping ^{[2
,3
]}

Wu, Jishan ^{[2
,4
]}

Li, Rongjin ^{[3
]}

Sun, Zhe ^{[1
]}

机构：

[1] Institute of Molecular Plus, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin university, 92 Weijin Road, Tianjin,300072, China

[2] Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou,350207, China

[3] Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, 92 Weijin Road, Tianjin,300072, China

[4] Department of Chemistry, National University of Singapore, Singapore,117543, Singapore

[5] Health Science Platform, Tianjin University, 92 Weijin Road, Tianjin,300072, China

[6] State Key Laboratory of Chemo/Biosensing and Chemometrics, Center for Aggregation-Induced Emission, College of Chemistry and Chemical Engineering, Hunan University, Changsha,410082, China

来源：

Angewandte Chemie - International Edition | 2021年 / 60卷 / 29期

关键词：

Polycyclic aromatic hydrocarbons - Aromatization - Paramagnetic resonance - Single crystals - Organic field effect transistors - Hole mobility;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Singlet diradicaloids hold great potential as semiconductors for organic field-effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet–triplet gap, as corroborated by variable-temperature electron paramagnetic resonance spectra, single-crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm2 V−1 s−1, which is the highest for zethrene-based semiconductors. Both isomers exhibited remarkable material stability in air-saturated solutions as well as excellent bias-stress and storage stability in device under ambient air. © 2021 Wiley-VCH GmbH

引用

页码：16230 / 16236

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