共 50 条
- [21] Mask effects on resist variability in extreme ultraviolet lithography [J]. Japanese Journal of Applied Physics, 2013, 52 (6 PART 2):
- [22] Mask absorber roughness impact in extreme ultraviolet lithography [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2011, 10 (02):
- [23] Patterning Dependence on the Mask Defect for Extreme Ultraviolet Lithography [J]. PHOTOMASK JAPAN 2015: PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XXII, 2015, 9658
- [24] Point cleaning of mask blanks for extreme ultraviolet lithography [J]. PHOTOMASK TECHNOLOGY 2006, PTS 1 AND 2, 2006, 6349
- [25] Mask defect management in extreme-ultraviolet lithography [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2014, 13 (02):
- [26] Illuminating extreme ultraviolet lithography mask defect printability [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2013, 12 (02):
- [27] Characterization of extreme ultraviolet lithography mask defects by actinic inspection with broadband extreme ultraviolet illumination [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 3000 - 3005
- [28] Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY III, 2012, 8322
- [29] Mitigating the forbidden pitch of extreme ultraviolet lithography using mask optimization based on genetic algorithm [J]. JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2022, 21 (04):