Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

被引：0

作者：

Huang, Zhong-Ying ^{[1
]}

Chen, Hsuan-Han ^{[1
]}

Liao, Ruo-Yin ^{[1
]}

Hsu, Hsiao-Hsuan ^{[2
]}

Lin, Kuan-Hsiang ^{[3
]}

Chen, Wei-Ting ^{[3
]}

Lin, Shih-Hao ^{[4
]}

Huang, Ching-Chien ^{[5
]}

Chou, Wu-Ching ^{[1
]}

Cheng, Chun-Hu ^{[3
]}

机构：

[1] Department of Electro-physics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

[2] Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei, Taiwan

[3] Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan

[4] International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

[5] Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan

来源：

Thin Solid Films | 2022年 / 755卷

关键词：

Capacitance - Ferroelectricity - Oxides - Plasma applications - Transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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