Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

被引：0
|
作者：
Huang, Zhong-Ying [1 ]
Chen, Hsuan-Han [1 ]
Liao, Ruo-Yin [1 ]
Hsu, Hsiao-Hsuan [2 ]
Lin, Kuan-Hsiang [3 ]
Chen, Wei-Ting [3 ]
Lin, Shih-Hao [4 ]
Huang, Ching-Chien [5 ]
Chou, Wu-Ching [1 ]
Cheng, Chun-Hu [3 ]
机构：
[1] Department of Electro-physics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
[2] Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei, Taiwan
[3] Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan
[4] International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
[5] Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan
来源：
Thin Solid Films | 2022年 / 755卷
关键词：
Capacitance - Ferroelectricity - Oxides - Plasma applications - Transistors;
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