Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

被引：0
|
作者：
Huang, Zhong-Ying [1 ]
Chen, Hsuan-Han [1 ]
Liao, Ruo-Yin [1 ]
Hsu, Hsiao-Hsuan [2 ]
Lin, Kuan-Hsiang [3 ]
Chen, Wei-Ting [3 ]
Lin, Shih-Hao [4 ]
Huang, Ching-Chien [5 ]
Chou, Wu-Ching [1 ]
Cheng, Chun-Hu [3 ]
机构：
[1] Department of Electro-physics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
[2] Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei, Taiwan
[3] Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan
[4] International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
[5] Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan
来源：
Thin Solid Films | 2022年 / 755卷
关键词：
Capacitance - Ferroelectricity - Oxides - Plasma applications - Transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment
    Huang, Zhong-Ying
    Chen, Hsuan-Han
    Liao, Ruo-Yin
    Hsu, Hsiao-Hsuan
    Lin, Kuan-Hsiang
    Chen, Wei-Ting
    Lin, Shih-Hao
    Huang, Ching-Chien
    Chou, Wu-Ching
    Cheng, Chun-Hu
    THIN SOLID FILMS, 2022, 755
  • [2] Investigation of Plasma Gradient Coatings with a Top Hafnium-Oxide Layer by Nuclear Backscattering Spectrometry
    Savushkina, S. V.
    Polyansky, M. N.
    Tkachenko, N. V.
    Borisov, A. M.
    Kamenskih, A. I.
    JOURNAL OF SURFACE INVESTIGATION, 2019, 13 (03): : 488 - 492
  • [3] Investigation of Plasma Gradient Coatings with a Top Hafnium-Oxide Layer by Nuclear Backscattering Spectrometry
    S. V. Savushkina
    M. N. Polyansky
    N. V. Tkachenko
    A. M. Borisov
    A. I. Kamenskih
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2019, 13 : 488 - 492
  • [4] Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor
    Cheng, Chun-Hu
    Fan, Chia-Chi
    Tu, Chun-Yuan
    Hsu, Hsiao-Hsuan
    Chang, Chun-Yen
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (01) : 825 - 828
  • [5] On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer
    Sil, Monali
    Nawa, Sk Masum
    Mallik, Abhijit
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (04)
  • [6] Plasma Sputtering of a Nanostructured Hafnium-Oxide Coating by Means of a Prandtl–Meyer Flow
    Savushkina S.V.
    Polyansky M.N.
    Panasova G.V.
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2018, 12 (5) : 982 - 987
  • [7] Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments
    Lee, You-Ting
    Chen, Hsuan-Han
    Tung, Yi-Chun
    Shih, Bing-Yang
    Hsiung, Szu-Yen
    Lee, Tsung-Ming
    Hsu, Chih-Chieh
    Liu, Chien
    Hsu, Hsiao-Hsuan
    Chang, Chun-Yen
    Lan, Yu-Pin
    Cheng, Chun-Hu
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [8] Performance Optimization of Analog Circuits in Negative Capacitance Transistor Technology
    Prakash, Om
    Chauhan, Nitanshu
    Gupta, Aniket
    Amrouch, Hussam
    MICROELECTRONICS JOURNAL, 2021, 115
  • [9] High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor
    Zhu Le-Yong
    Gao Ya-Na
    Zhang Jian-Hua
    Li Xi-Feng
    ACTA PHYSICA SINICA, 2015, 64 (16)
  • [10] Investigation on the Negative Capacitance Field Effect Transistor with Dual Ferroelectric Region
    Yao, Jia-Fei
    Han, Xue
    Zhang, Xin-Peng
    Liu, Jin-Cheng
    Gu, Ming-Yuan
    Zhang, Mao-Lin
    Yu, Ke-Han
    Guo, Yu-Feng
    CRYSTALS, 2022, 12 (11)
12345