A 22 nm CMOS 2.4 GHz 40.91 dB voltage gain RX front-end design

被引:0
|
作者
Zhang, Bodong [1 ]
Luo, Xiao [1 ]
Tang, Xian [1 ]
Mai, Songping [1 ]
Xing, Xinpeng [2 ]
Feng, Haigang [1 ]
机构
[1] Tsinghua Univ, Shenzhen Int Grad Sch, Shenzhen 518057, Peoples R China
[2] Sun Yat Sen Univ, Sch Integrated Circuits, Shenzhen 518107, Peoples R China
关键词
Internet of things (ioT); Transmit/receive switch (TRSW); Low noise amplifier (LNA); Receiver front-end (RXFE); PATH NOISE; LNA;
D O I
10.1016/j.mejo.2024.106164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This briefing introduces a receiver (RX) front-end integrated with a virtual switch-based transmit/receive switch (TRSW) and a reconfigurable capacitor cross-coupled low noise amplifier (LNA) that employs the gain control scheme of direct shunt. Simulation and testing results indicate that the TRSW has an insertion loss of 0.2 dB and an isolation of 30 dB. The LNA achieves a maximum voltage gain of 40.91 dB or a power gain of 31.91 dB, a minimum S11 of - 18.5 dB, and an input third-order intercept point of - 22 dBm. The LNA consumes 2 mA from a 0.9 V power supply and has a minimum NF of 2.97 dB.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] A 39 GHz T/R Front-End Module in 65nm CMOS
    Zhang, Xuexue
    Qiao, Kun
    Chen, Qin
    Liang, Yue
    Li, Lianming
    Feng, Jun
    2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2021,
  • [42] Multi-Gigabit 60 GHz OOK Front-End in 90 nm CMOS
    Hamidian, Amin
    Malignaggi, Andrea
    Shu, Ran
    Kamal, Ali M.
    Boeck, Georg
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 96 - 98
  • [43] Design of a 60-GHz receiver front-end with broadband matching techniques in 65-nm CMOS
    Chai, Yuan
    Li, Lianming
    Cui, Tiejun
    IEICE ELECTRONICS EXPRESS, 2018, 15 (24):
  • [44] A 30-40 GHz CMOS Receiver Front-End with 5.9 dB NF and 16.5 dB Conversion Gain for Broadband Spectrum Sensing Applications
    Jung, Hyunki
    Utomo, Dzuhri Radityo
    Shin, Saebyeok
    Han, Seok-Kyun
    Lee, Sang-Gug
    Kim, Junsung
    ELECTRONICS, 2019, 8 (05):
  • [45] A 57dBΩ 1GHz CMOS Front-end Preamplifier for Optical Receivers
    Liu Ru-qing
    Wang Zhu-ping
    Tian Jia
    Meng Zhe
    2012 INTERNATIONAL CONFERENCE ON WIRELESS COMMUNICATIONS, NETWORKING AND MOBILE COMPUTING (WICOM), 2012,
  • [46] Design of a Low Voltage-Low Power 3.1-10.6 GHz UWB RF Front-End in a CMOS 65 nm Technology
    Simitsakis, Paschalis
    Papananos, Yannis
    Kytonaki, Eleni-Sotiria
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2010, 57 (11) : 833 - 837
  • [47] A High Conversion Gain, Low Noise Figure RF-CMOS Receiver Front-End IC for 2.4-GHz Applications
    Nirouei, Mahyar
    Ziabakhsh, Soheil
    Alavi-Rad, Hosein
    Ziabakhsh, Saman
    PROCEEDINGS OF THE 2010 IEEE ASIA PACIFIC CONFERENCE ON CIRCUIT AND SYSTEM (APCCAS), 2010, : 839 - 842
  • [48] A 2.4GHz Low Noise High Linearity RF Front-end Design
    Chen, Zhijian
    Cai, Min
    Xu, Ken
    Zheng, Weiguo
    PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [49] A CMOS 77 GHz Radar Receiver Front-end
    Hoang Viet Le
    Hoa Thai Duong
    Anh Trong Huynh
    Evans, Robin J.
    Skafidas, Efstratios
    2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 13 - 16
  • [50] A 60-GHz CMOS receiver front-end
    Razavi, B
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (01) : 17 - 22