A 22 nm CMOS 2.4 GHz 40.91 dB voltage gain RX front-end design

被引：0
|
作者：
Zhang, Bodong [1 ]
Luo, Xiao [1 ]
Tang, Xian [1 ]
Mai, Songping [1 ]
Xing, Xinpeng [2 ]
Feng, Haigang [1 ]
机构：
[1] Tsinghua Univ, Shenzhen Int Grad Sch, Shenzhen 518057, Peoples R China
[2] Sun Yat Sen Univ, Sch Integrated Circuits, Shenzhen 518107, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2024年 / 147卷
关键词：
Internet of things (ioT); Transmit/receive switch (TRSW); Low noise amplifier (LNA); Receiver front-end (RXFE); PATH NOISE; LNA;
D O I：
10.1016/j.mejo.2024.106164
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This briefing introduces a receiver (RX) front-end integrated with a virtual switch-based transmit/receive switch (TRSW) and a reconfigurable capacitor cross-coupled low noise amplifier (LNA) that employs the gain control scheme of direct shunt. Simulation and testing results indicate that the TRSW has an insertion loss of 0.2 dB and an isolation of 30 dB. The LNA achieves a maximum voltage gain of 40.91 dB or a power gain of 31.91 dB, a minimum S11 of - 18.5 dB, and an input third-order intercept point of - 22 dBm. The LNA consumes 2 mA from a 0.9 V power supply and has a minimum NF of 2.97 dB.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] Development of 2.4 GHz RF transceiver front-end chipset in 0.25μm CMOS
    Sarkar, S
    Sen, P
    Raghavan, A
    Chakarborty, S
    Laskar, J
    16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 42 - 47
  • [22] A 110-125 GHz 27.5 dB Gain Low-power I/Q Receiver Front-end in 65 nm CMOS Technology
    Lee, Chae Jun
    Kang, Dong Min
    Kim, Joon Hyung
    Byeon, Chul Woo
    Park, Chul Soon
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 599 - 602
  • [23] A Low-Voltage CMOS Current Mode Integrated Transmitter Front-end for 2.4-GHz Wireless Communications
    Wan, Qiuzhen
    Wang, Chunhua
    FREQUENZ, 2010, 64 (11-12) : 240 - 245
  • [24] A 78 ∼ 102 GHz Front-End Receiver in 90 nm CMOS Technology
    Su, Hsuan-Yi
    Hu, Robert
    Wu, Chung-Yu
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (09) : 489 - 491
  • [25] Design of a 2.4-GHz 2.2-mW CMOS RF Receiver Front-End for BLE Applications
    Chang, Shinil
    Lee, Yongho
    Shin, Hyunchol
    PROCEEDINGS INTERNATIONAL SOC DESIGN CONFERENCE 2017 (ISOCC 2017), 2017, : 33 - 34
  • [26] 2.4 GHz BiCMOS front-end receiver design driven by gain, linearity and noise trade-offs
    Spiridon, S
    Mazilu, MC
    Op't Eynde, F
    Dan, C
    Bodea, M
    2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, : 365 - 368
  • [27] A Power Scalable Receiver Front-End at 2.4 GHz
    Ghosal, Kaushik
    Kannan, S. A.
    Amrutur, Bharadwaj
    2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 2765 - 2768
  • [28] A 22-31 GHz Bidirectional 5G Transceiver Front-End in 28 nm CMOS
    Manente, D.
    Quadrelli, F.
    Padovan, F.
    Bassi, M.
    Mazzanti, A.
    Bevilacqua, A.
    ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2021, : 283 - 286
  • [29] Design and Analysis of a 140-GHz T/R Front-End Module in 22-nm FD-SOI CMOS
    Tang, Xinyan
    Nguyen, Johan
    Mangraviti, Giovanni
    Zong, Zhiwei
    Wambacq, Piet
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57 (05) : 1300 - 1313
  • [30] 16.9-mW 33.7-dB Gain mm Wave Receiver Front-End in 65 nm CMOS
    Li, Chun-Hsing
    Kuo, Chien-Nan
    2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 179 - 182
12345