Fabrication of a Silicon Electron Multiplier sensor using metal assisted chemical etching and its characterisation

被引：0

作者：

Halvorsen, Marius Mæhlum ^{[1
,2
]}

Coco, Victor ^{[1
]}

Collins, Paula ^{[1
]}

Sandaker, Heidi ^{[2
]}

Romano, Lucia ^{[3
,4
]}

机构：

[1] CERN EP-LBD, Esplanade des Particules 1, Meyrin,1211, Switzerland

[2] University of Oslo, Department of Physics, Oslo,0315, Norway

[3] Institute for Biomedical Engineering, University and ETH Zürich, Zürich,8092, Switzerland

[4] Paul Scherrer Institute, Forschungsstrasse 111, Villigen,CH-5232, Switzerland

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2024年 / 1060卷

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The Silicon Electron Multiplier (SiEM) sensor is a novel sensor concept that enables charge multiplication by high electric fields generated by embedded metal electrodes within the sensor bulk. Metal assisted chemical etching (MacEtch) in gas phase with platinum as a catalyst has been used to fabricate test structures consisting of vertically aligned silicon pillars and strips on top of a silicon bulk. The pillars are around 10 µm in height with a diameter of 1.0 µm and are arranged as a hexagonal lattice with a pitch of 1.5 µm. Electrical characterisations through current–voltage measurements inside a scanning electron microscope and a climate chamber have demonstrated that the MacEtch process is compatible with p–n junctions. © 2023

引用

共 50 条

[41] Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching
Liu, Ruiyuan
Zhang, Fute
Con, Celal
Cui, Bo
Sun, Baoquan
[J]. NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 8
[42] Metal Assisted Chemical Etching For Light Emitting Silicon Nanowires
Jana, S.
Bhattacharyya, S. R.
[J]. PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 285 - 286
[43] Role of catalyst concentration on metal assisted chemical etching of silicon
Cichoszewski, J.
Reuter, M.
Schwerdt, F.
Werner, J. H.
[J]. ELECTROCHIMICA ACTA, 2013, 109 : 333 - 339
[44] Metal-assisted chemical etching of silicon and nanotechnology applications
Han, Hee
Huang, Zhipeng
Lee, Woo
[J]. NANO TODAY, 2014, 9 (03) : 271 - 304
[45] Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application
Koval, Viktoriia
Yakymenko, Yuriy
Ivashchuk, Anatoliy
Dusheyko, Mykhailo
Masalskyi, Oleksandr
Koliada, Mykola
Kulish, Dmytro
[J]. 2019 IEEE 39TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2019, : 282 - 287
[46] Vapor Phase Metal-Assisted Chemical Etching of Silicon
Hildreth, Owen J.
Schmidt, Daniel R.
[J]. ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (24) : 3827 - 3833
[47] Porous Silicon Formation by Metal-Assisted Chemical Etching
Lipinski, M.
Cichoszewski, J.
Socha, R. P.
Piotrowski, T.
[J]. ACTA PHYSICA POLONICA A, 2009, 116 : S117 - S119
[48] Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching
Duran, Joshua M.
Sarangan, Andrew
[J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2017, 16 (01):
[49] Using HCl to Control Silver Dissolution in Metal-Assisted Chemical Etching of Silicon
Williams, Max O.
Jervell, Ada L. H.
Hiller, Daniel
Zacharias, Margit
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18):
[50] Fabrication and Electron Field Emission of Silicon Nanowires Synthesized by Chemical Etching
Zhao, Fei
Zhao, Dan-dan
Wu, Shao-long
Cheng, Guo-an
Zheng, Rui-ting
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (06) : 2681 - 2684

← 1 2 3 4 5 →