Fabrication of a Silicon Electron Multiplier sensor using metal assisted chemical etching and its characterisation

被引：0

作者：

Halvorsen, Marius Mæhlum ^{[1
,2
]}

Coco, Victor ^{[1
]}

Collins, Paula ^{[1
]}

Sandaker, Heidi ^{[2
]}

Romano, Lucia ^{[3
,4
]}

机构：

[1] CERN EP-LBD, Esplanade des Particules 1, Meyrin,1211, Switzerland

[2] University of Oslo, Department of Physics, Oslo,0315, Norway

[3] Institute for Biomedical Engineering, University and ETH Zürich, Zürich,8092, Switzerland

[4] Paul Scherrer Institute, Forschungsstrasse 111, Villigen,CH-5232, Switzerland

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2024年 / 1060卷

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The Silicon Electron Multiplier (SiEM) sensor is a novel sensor concept that enables charge multiplication by high electric fields generated by embedded metal electrodes within the sensor bulk. Metal assisted chemical etching (MacEtch) in gas phase with platinum as a catalyst has been used to fabricate test structures consisting of vertically aligned silicon pillars and strips on top of a silicon bulk. The pillars are around 10 µm in height with a diameter of 1.0 µm and are arranged as a hexagonal lattice with a pitch of 1.5 µm. Electrical characterisations through current–voltage measurements inside a scanning electron microscope and a climate chamber have demonstrated that the MacEtch process is compatible with p–n junctions. © 2023

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