A High-Efficiency Two-Stage GaAs HBT Doherty Power Amplifier With Thermal Compensation for WLAN Application

被引：0
|
作者：
Wan, Shun [1 ]
Chen, WenHua [1 ]
Xia, BoWen [1 ]
Lv, Guansheng [1 ]
Chen, Long [1 ]
Li, DongHao [1 ]
Feng, Zhenghe [1 ]
机构：
[1] Department of Electronic Engineering, Tsinghua University, Beijing,100084, China
来源：
2021 IEEE MTT-S International Wireless Symposium, IWS 2021 - Proceedings | 2021年
关键词：
Average power - Bias circuits - Doherty power amplifier - Dynamic bias - Error vector - Higher efficiency - InGaP-GaAs heterojunction bipolar transistors - InGaP/gaas heterojunction bipolar transistor - Thermally compensated dynamic bias circuit;
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