A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications

被引:3
|
作者
Yang, Haohan [1 ,2 ]
You, Heng [1 ,2 ]
Qiao, Shushan [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelectron, Smart Sensing R&D Ctr, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2022年 / 19卷 / 12期
关键词
power amplifier; wireless local area network; GaAs heterojunction bipolar transistor; harmonic matching; adaptive bias;
D O I
10.1587/elex.19.20220157
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An efficiency-enhanced fully integrated power amplifier (PA) for wireless local area networks (WLANs) was implemented based on the GaAs heterojunction bipolar transistor (HBT) process. A harmonic tuning network that can absorb the parasitic inductance of the bonding wires is proposed, which reduces the chip area significantly. The network provides nearly optimum fundamental and second harmonic impedances from 5.0 to 5.5 GHz. Additionally, a novel adaptive bias circuit that corrects the AMAM and AM-PM distortion and improve thermal stability at high input power was proposed. With a chip dimension of only 1.06mm(2), the PA achieves a gain of 31.1-31.6 dB and saturated power of 29.9-30.3 dBm with a peak power-added efficiency (PAE) of 49.3%-51.8% across 5.0-5.5 GHz. The PA also shows an output power of 22.1 dBm (EVM=-32 dB) with 18.4% PAE under an 802.11ac MCS9 VHT160 test signal. In addition, the PA delivers 17.5 dBm (EVM=-42 dB) output power when tested with the 802.11ax MCS11 VHT160 signal at 5.25 GHz.
引用
收藏
页数:6
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