Monolayer V2MX4: A New Family of Quantum Anomalous Hall Insulators

被引:13
|
作者
Jiang, Yadong [1 ,2 ]
Wang, Huan [1 ,2 ]
Bao, Kejie [1 ,2 ]
Liu, Zhaochen [1 ,2 ]
Wang, Jing [1 ,2 ,3 ,4 ]
机构
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[3] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Zhangjiang Fudan Int Innovat Ctr, Shanghai 200433, Peoples R China
[4] Hefei Natl Lab, Hefei 230088, Peoples R China
关键词
REALIZATION; DYNAMICS; STATE;
D O I
10.1103/PhysRevLett.132.106602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V2MX4 (M = W, Mo; X = S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C = -1. The large topological gap originates from the deep band inversion between spin-up bands contributed by dxz, dyz orbitals of V and spin-down band from dz2 orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V2MX4 is predicted to be much higher than that of monolayer MnBi2Te4. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the d orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti2WX4 with the space group P-42m. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Chiral edge state coupling theory of transport in quantum anomalous Hall insulators
    Rui Chen
    Hai-Peng Sun
    Bin Zhou
    Dong-Hui Xu
    Science China(Physics,Mechanics & Astronomy), 2023, Mechanics & Astronomy)2023 (08) : 105 - 111
  • [42] Effect of external fields in high Chern number quantum anomalous Hall insulators
    Baba, Yuriko
    Amado, Mario
    Diez, Enrique
    Dominguez-Adame, Francisco
    Molina, Rafael A.
    PHYSICAL REVIEW B, 2022, 106 (24)
  • [43] Temperature and chemical potential dependence of the parity anomaly in quantum anomalous Hall insulators
    Tutschku, Christian
    Nogueira, Flavio S.
    Northe, Christian
    van den Brink, Jeroen
    Hankiewicz, E. M.
    PHYSICAL REVIEW B, 2020, 102 (20)
  • [44] Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN2
    Li, Shengshi
    Li, Xinyang
    Ji, Weixiao
    Li, Ping
    Yan, Shishen
    Zhang, Changwen
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (27) : 18275 - 18283
  • [45] MX6C2H monolayers: The novel two-dimensional tunable Dirac cone materials family and quantum spin Hall insulators
    Gao, Bing
    Zhang, Li
    SOLID STATE COMMUNICATIONS, 2023, 372
  • [46] Large intrinsic spin Hall conductivity and anomalous Hall conductivity in monolayer MnBi2Te4
    Gong, Lingpu
    Li, Yan
    Wang, Huaiqiang
    Zhang, Haijun
    PHYSICAL REVIEW B, 2024, 109 (04)
  • [47] Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
    Liu, Qunqun
    Dai, Ying
    Ma, Yandong
    Li, Xinru
    Li, Tiejun
    Niu, Chengwang
    Huang, Baibiao
    SCIENTIFIC REPORTS, 2016, 6
  • [48] Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
    Qunqun Liu
    Ying Dai
    Yandong Ma
    Xinru Li
    Tiejun Li
    Chengwang Niu
    Baibiao Huang
    Scientific Reports, 6
  • [49] Quadratic band crossing induced quantum anomalous Hall effect in monolayer MoTe2F2
    Chen, Fanzheng
    Chen, Hongxin
    Zhao, Xiuwen
    Hu, Guichao
    Yuan, Xiaobo
    Ren, Junfeng
    PHYSICAL REVIEW B, 2025, 111 (07)
  • [50] Quantum anomalous Hall effect in a nonmagnetic bismuth monolayer with a high Chern number
    Zhang, Zequn
    Li, Runhan
    Bai, Yingxi
    Zhang, Yilin
    Huang, Baibiao
    Dai, Ying
    Niu, Chengwang
    MATERIALS HORIZONS, 2025,