Monolayer V2MX4: A New Family of Quantum Anomalous Hall Insulators

被引:13
|
作者
Jiang, Yadong [1 ,2 ]
Wang, Huan [1 ,2 ]
Bao, Kejie [1 ,2 ]
Liu, Zhaochen [1 ,2 ]
Wang, Jing [1 ,2 ,3 ,4 ]
机构
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[3] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Zhangjiang Fudan Int Innovat Ctr, Shanghai 200433, Peoples R China
[4] Hefei Natl Lab, Hefei 230088, Peoples R China
关键词
REALIZATION; DYNAMICS; STATE;
D O I
10.1103/PhysRevLett.132.106602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V2MX4 (M = W, Mo; X = S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C = -1. The large topological gap originates from the deep band inversion between spin-up bands contributed by dxz, dyz orbitals of V and spin-down band from dz2 orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V2MX4 is predicted to be much higher than that of monolayer MnBi2Te4. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the d orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti2WX4 with the space group P-42m. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators
    Guterding, Daniel
    Jeschke, Harald O.
    Valenti, Roser
    SCIENTIFIC REPORTS, 2016, 6
  • [22] General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect
    Daniel Kaplan
    Tobias Holder
    Binghai Yan
    Nature Communications, 14
  • [23] General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect
    Kaplan, Daniel
    Holder, Tobias
    Yan, Binghai
    NATURE COMMUNICATIONS, 2023, 14 (01)
  • [24] Atomic scale quantum anomalous hall effect in monolayer graphene/MnBi2Te4 heterostructure
    Yao, Yueh-Ting
    Xu, Su-Yang
    Chang, Tay-Rong
    MATERIALS HORIZONS, 2024, 11 (14) : 3420 - 3426
  • [25] Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer
    Chang, Yufang
    Zhang, Zhijun
    Deng, Li
    Wu, Yanzhao
    Zhang, Xianmin
    MATERIALS, 2024, 17 (13)
  • [26] Geometric effect on quantum anomalous Hall states in magnetic topological insulators
    Xing, Yanxia
    Xu, Fuming
    Sun, Qing-Feng
    Wang, Jian
    Yao, Yu-Gui
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (43)
  • [27] Nonmagnetic doping induced quantum anomalous Hall effect in topological insulators
    Qi, Shifei
    Gao, Ruiling
    Chang, Maozhi
    Hou, Tao
    Han, Yulei
    Qiao, Zhenhua
    PHYSICAL REVIEW B, 2020, 102 (08)
  • [28] Three-dimensional quantum anomalous Hall effect in ferromagnetic insulators
    Jin, Y. J.
    Wang, R.
    Xia, B. W.
    Zheng, B. B.
    Xu, H.
    PHYSICAL REVIEW B, 2018, 98 (08)
  • [29] Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators
    Tay, Han
    Zhao, Yi-Fan
    Zhou, Ling-Jie
    Zhang, Ruoxi
    Yan, Zi-Jie
    Zhuo, Deyi
    Chan, Moses H. W.
    Chang, Cui-Zu
    NANO LETTERS, 2023, 23 (03) : 1093 - 1099
  • [30] Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
    Wang, Shu-Wei
    Xiao, Di
    Dou, Ziwei
    Cao, Moda
    Zhao, Yi-Fan
    Samarth, Nitin
    Chang, Cui-Zu
    Connolly, Malcolm R.
    Smith, Charles G.
    PHYSICAL REVIEW LETTERS, 2020, 125 (12)