Observation of ferromagnetism in highly oxygen-deficient HfO2 films

被引：0
|
作者：
蒋然 [1 ]
张燕 [2 ]
机构：
[1] School of Physics,Shandong University
[2] School of Information Science and Engineering,Shandong University
来源：
Journal of Semiconductors | 2009年 / 10期
基金：
国家教育部博士点专项基金资助;
关键词：
sputtering; dielectrics; high k; d0; magnetism; oxygen vacancy;
D O I：
暂无
中图分类号：
TN304.055 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Ferromagnetism in undoped and cobalt-doped high-k HfO2 films was investigated.No ferromagnetism was observed in stoichiometric HfO2 films,but we observed weak ferromagnetism in highly oxygen-deficient HfO2 films.Undoped and cobalt doped films were treated by alternate annealing in vacuum and oxygen atmospheres.From the experiments,both the lack of oxygen vacancies and the increase of oxygen species in bulk(e.g.interstitial oxygen)will degrade the magnetic ordering.Additionally,it is believed that cobalt doping has no obvious relationship with the observed intrinsic d0 magnetism.
引用
收藏
页码：5 / 9
页数：5
相关论文
共 50 条
  • [41] Observation of bulk HfO2 defects by spectroscopic ellipsometry
    Takeuchi, H
    Ha, D
    King, TJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1337 - 1341
  • [42] Microstructural evolution and ferroelectricity in HfO2 films
    Zhao, Dou
    Chen, Zibin
    Liao, Xiaozhou
    [J]. MICROSTRUCTURES, 2022, 2 (02):
  • [43] Optical characterization of HfO2 thin films
    Franta, Daniel
    Ohlidal, Ivan
    Necas, David
    Vizda, Frantisek
    Caha, Ondrej
    Hason, Martin
    Pokorny, Pavel
    [J]. THIN SOLID FILMS, 2011, 519 (18) : 6085 - 6091
  • [44] Magnetic properties of HfO2 thin films
    Hadacek, N.
    Nosov, A.
    Ranno, L.
    Strobel, P.
    Galera, R-M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (48)
  • [45] Spectroellipsometric assessment of HfO2 thin films
    Buiu, O.
    Lu, Y.
    Mitrovic, I. Z.
    Hall, S.
    Chalker, P.
    Potter, R. J.
    [J]. THIN SOLID FILMS, 2006, 515 (02) : 623 - 626
  • [46] Preparation and Properties of Thin HfO2 Films
    L. V. Yakovkina
    V. N. Kichai
    T. P. Smirnova
    V. V. Kaichev
    Yu. V. Shubin
    N. B. Morozova
    K. V. Zherikova
    I. K. Igumenov
    [J]. Inorganic Materials, 2005, 41 : 1300 - 1304
  • [47] Thickness measurement of nm HfO2 films
    Kim, K. J.
    Kim, A.
    Kim, C. S.
    Song, S. W.
    Ruh, H.
    Unger, W. E. S.
    Radnik, J.
    Mata-Salazar, J.
    Juarez-Garcia, J. M.
    Cortazar-Martinez, O.
    Herrera-Gomez, A.
    Hansen, P. E.
    Madesen, J. S.
    Senna, C. A.
    Archanjo, B. S.
    Damasceno, J. C.
    Achete, C. A.
    Wang, H.
    Wang, M.
    Windover, D.
    Steel, E.
    Kurokawa, A.
    Fujimoto, T.
    Azuma, Y.
    Terauchi, S.
    Zhang, L.
    Jordaan, W. A.
    Spencer, S. J.
    Shard, A. G.
    Koenders, L.
    Krumrey, M.
    Busch, I.
    Jeynes, C.
    [J]. METROLOGIA, 2021, 58 (1A)
  • [48] Synthesis, characterization and exploration of the NIR luminescent properties in HfO2: Er, HfO2:Tm and HfO2:Er/Tm films photochemically prepared
    Cabello-Guzman, G.
    Matus, Marcela
    Fernandez, Luis
    Caro-Diaz, C.
    Lillo, Luis
    Valenzuela-Melgarejo, F.
    Seguel, Mathias
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2023, 307
  • [49] Growth and characterization of HfO2 thin films
    Beijing General Research Institute for Nonferrous Metals, Beijing Guojing Infrared Optical Technology Co. Ltd., Beijing 100088, China
    [J]. Zhenkong Kexue yu Jishu Xuebao, 2008, 2 (159-163):
  • [50] Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films
    Cen Min
    Zhang Yue-Guang
    Chen Wei-Lan
    Gu Pei-Fu
    [J]. ACTA PHYSICA SINICA, 2009, 58 (10) : 7025 - 7029
12345