Magnetic properties of HfO2 thin films

被引：30
|
作者：
Hadacek, N. [1 ]
Nosov, A. [2 ]
Ranno, L. [1 ]
Strobel, P. [1 ]
Galera, R-M [1 ]
机构：
[1] CNRS, Inst Neel, F-38042 Grenoble, France
[2] Russian Acad Sci, Inst Met Phys, Elect Phenomena Lab, R-620041 Ekaterinburg, Russia
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 48期
关键词：
D O I：
10.1088/0953-8984/19/48/486206
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10(-7) to 10(-1) mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P approximate to 10(-7) mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10(-5) <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.
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页数：12
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