Enhanced absorption process in the thin active region of GaAs based p–i–n structure

被引：1

作者：

岳琛 ^{[1
,2
,3
]}

唐先胜 ^{[1
,2
,3
]}

李阳锋 ^{[1
]}

王文奇 ^{[1
]}

李欣欣 ^{[1
,2
,3
]}

张珺玚 ^{[1
,2
,3
]}

邓震 ^{[1
]}

杜春花 ^{[1
]}

贾海强 ^{[1
,3
,4
]}

王文新 ^{[1
,3
,4
]}

陆卫 ^{[5
]}

江洋 ^{[1
]}

陈弘 ^{[1
,3
,4
]}

机构：

[1] Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences

[2] University of Academy of Sciences

[3] Center of Material and Optoelectronics Engineering, University of Academy of Sciences

[4] Songshan Lake Material Laboratory

[5] State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

来源：

Chinese Physics B | 2021年 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TB34 [功能材料];

学科分类号：

080501 ;

摘要：

The optical absorption is the most important macroscopic process to characterize the microscopic optical transition in the semiconductor materials. Recently, great enhancement has been observed in the absorption of the active region within a p–n junction. In this paper, Ga As based p–i–n samples with the active region varied from 100 nm to 3 μm were fabricated and it was observed that the external quantum efficiencies are higher than the typical results, indicating a new mechanism beyond the established theories. We proposed a theoretical model about the abnormal optical absorption process in the active region within a strong electric field, which might provide new theories for the design of the solar cells,photodetectors, and other photoelectric devices.

引用

页码：534 / 538

页数：5

共 50 条

[21] PHOTOREFLECTANCE SPECTRA OF A GAAS/ALGAAS TYPE-I HETERO-N-I-P-I STRUCTURE
KEIL, UD
MALZER, S
SCHMIDT, K
DOHLER, GH
MILLER, JN
SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (01) : 41 - 46
[22] PHOTOINDUCED DISPLACEMENT OF THE SPACE-CHARGE REGION IN GAAS P-I-N STRUCTURES
ILINSKII, AV
KUTSENKO, AB
MELNIKOV, MB
SEMICONDUCTORS, 1994, 28 (07) : 673 - 678
[23] A new p-n structure ultraviolet photodetector with p--GaN active region
Zhou Mei
Zhao De-Gang
ACTA PHYSICA SINICA, 2009, 58 (10) : 7255 - 7260
[24] Plasmon-Enhanced Light Absorption in (p-i-n) Junction GaAs Nanowire Solar Cells: An FDTD Simulation Method Study
E. A. Dawi
A. A. Karar
E. Mustafa
O. Nur
Nanoscale Research Letters, 16
[25] Plasmon-Enhanced Light Absorption in (p-i-n) Junction GaAs Nanowire Solar Cells: An FDTD Simulation Method Study
Dawi, E. A.
Karar, A. A.
Mustafa, E.
Nur, O.
NANOSCALE RESEARCH LETTERS, 2021, 16 (01):
[26] Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes
Appl Phys Lett, 2 (232):
[27] Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes
Ong, DS
Li, KF
Rees, GJ
David, JPR
Robson, PN
Dunn, GM
APPLIED PHYSICS LETTERS, 1998, 72 (02) : 232 - 234
[28] PICOSECOND OPTICAL NONLINEARITIES IN A STRAINED INAS/GAAS HETERO N-I-P-I STRUCTURE
MCCALLUM, DS
HUANG, XR
DAWSON, MD
BOGGESS, TF
SMIRL, AL
HASENBERG, TC
KOST, A
JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 929 - 932
[29] Picosecond optical nonlinearities in a strained InAs/GaAs hetero n-i-p-i structure
1600, (71):
[30] GaAs0.95P0.05 single junction solar cell with InP QW in p-i-n region for sub-bandgap photon absorption
Verma, Manish
Routray, Soumya R.
Sahoo, Girija Shanker
Mishra, Guru Prasad
PHYSICA SCRIPTA, 2023, 98 (07)

← 1 2 3 4 5 →