An ab initio study of strained two-dimensional MoSe

被引:0
|
作者
Bahniman Ghosh [1 ,2 ]
Naval Kishor [2 ]
机构
[1] Microelectronics Research Center,10100 Burnet Road,Bldg. 160,University of Texas at Austin
[2] Department of Electrical Engineering,Indian Institute of Technology Kanpur
关键词
MoSe2; band structure; self-consistent calculations;
D O I
暂无
中图分类号
TN304 [材料];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
We have studied the electronic properties of molybdenum diselenide(MoSe;) in both bulk and monolayer(zigzag and armchair) forms using density function theory.The metallic nature of the zigzag MoSe;(ZMoSe;)nanoribbon and the semiconducting behavior of the armchair MoSe;(AMoSe;) nanoribbon have been explored using a band structure calculated using self-consistent calculations.We have also studied the variation in the bandgap in the presence of a small amount of strain(uniaxial,biaxial).The effect of tensile strain has been investigated and shifts in the conduction band and valance band have been observed with different amounts of applied strain.
引用
收藏
页码:15 / 19
页数:5
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