Piezoelectricity in two-dimensional materials: Comparative study between lattice dynamics and ab initio calculations

被引:40
|
作者
Michel, K. H. [1 ]
Cakir, D. [1 ,2 ]
Sevik, C. [3 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Fys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[2] Univ North Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA
[3] Anadolu Univ, Dept Mech Engn, Fac Engn, TR-26555 Eskisehir, Turkey
关键词
TOTAL-ENERGY CALCULATIONS; MOLECULAR-DYNAMICS; MOS2; SEMICONDUCTORS; POLARIZATION;
D O I
10.1103/PhysRevB.95.125415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The elastic constant C-11 and piezoelectric stress constant e(1),(11) of two-dimensional (2D) dielectric materials comprising h-BN, 2H-MoS2, and other transition-metal dichalcogenides and dioxides are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained with ab initio calculations. We identify the difference between clamped-ion and relaxed-ion contributions with the dependence on inner strains which are due to the relative displacements of the ions in the unit cell. Lattice dynamics allows us to express the inner-strain contributions in terms of microscopic quantities such as effective ionic charges and optoacoustical couplings, which allows us to clarify differences in the piezoelectric behavior between h-BN and MoS2. Trends in the different microscopic quantities as functions of atomic composition are discussed.
引用
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页数:7
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