A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process

<正>A radio frequency（RF） receiver frontend for single-carrier ultra-wideband（SC-UWB） is presented. The front end employs direct-conversion architecture,and consists of a differential low noise amplifier（LNA）,a quadrature mixer,and two intermediate frequency（IF） amplifiers.The proposed LNA employs source inductively degenerated topology.First,the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S11 is given.Then,a noise figure optimization strategy under gain and power constraints is proposed,with consideration of the integrated gate inductor,the bond-wire inductance,and its variation.The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band,and has two gain modes to obtain a higher receiver dynamic range.The mixer uses a double balanced Gilbert structure.The front end is fabricated in a TSMC 0.18-/im RF CMOS process and occupies an area of 1.43 mm2.In high and low gain modes,the measured maximum conversion gain are 42 dB and 22 dB,input 1 dB compression points are -40 dBm and -20 dBm,and S11 is better than -18 dB and -14.5 dB.The 3 dB IF bandwidth is more than 500 MHz.The double sideband noise figure is 4.7 dB in high gain mode.The total power consumption is 65 mW from a 1.8 V supply.