Molecular dynamic simulation of non-melt laser annealing process

被引：0
|
作者：
严利人 [1 ]
李岱 [1 ]
张伟 [1 ]
刘志弘 [1 ]
周伟 [2 ]
王全 [2 ]
机构：
[1] Institute of Microelectronics Tsinghua University
[2] Shanghai Integrated Circuit Research & Development
来源：
Journal of Semiconductors | 2016年 / 37卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TN305 [半导体器件制造工艺及设备];
学科分类号：
1401 ;
摘要：
Molecular dynamic simulation is performed to study the process of material annealing caused by a 266 nm pulsed laser. A micro-mechanism describing behaviors of silicon and impurity atoms during the laser annealing at a non-melt regime is proposed. After ion implantation, the surface of the Si wafer is acted by a high energy laser pulse, which loosens the material and partially frees both Si and impurity atoms. While the residual laser energy is absorbed by valence electrons, these atoms are recoiled and relocated to finally form a crystal. Energyrelated movement behavior is observed by using the molecular dynamic method. The non-melt laser anneal appears to be quite sensitive to the energy density of the laser, as a small excess energy may causes a significant impurity diffusion. Such a result is also supported by our laser anneal experiment.
引用
收藏
页码：126 / 131
页数：6
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