Low temperature Sn-rich Au–Sn wafer-level bonding

被引：0
|
作者：
方志强 [1 ,2 ]
毛旭 [1 ,2 ]
杨晋玲 [1 ,2 ]
杨富华 [1 ]
机构：
[1] Research Center of Engineering for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences
[2] State Key Laboratory of Transducer
来源：
Journal of Semiconductors | 2013年 / 34卷 / 10期
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摘要：
Sn-rich Au–Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices.The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au–Sn system makes a major contribution to the high bonding shear strength.The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10-7 atm·cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃.This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.
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页码：165 / 168
页数：4
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