共 50 条
- [31] Electronic states associated with straight dislocations in p-type silicon studied by means of electric-dipole spin resonance Materials Science Forum, 1995, 196-201 (pt 3): : 1189 - 1194
- [32] Electronic states associated with straight dislocations in p-type silicon studied by means of electric-dipole spin resonance ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1189 - 1193
- [34] PHOTOEMISSION OF ELECTRONS FROM P-TYPE GAAS SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 952 - +
- [36] Anisotropy of spin-resonance position in p-type InSb inversion layer Chen, Yang-Fang, 1600, (76):
- [38] SPIN RESONANCE WIDTHS OF ELECTRONS IN DONOR STATES IN SILICON PHYSICAL REVIEW, 1955, 98 (05): : 1561 - 1561