共 50 条
- [21] Electrical characteristic of oxygen-related donors in p-type czochralski silicon Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (04): : 377 - 381
- [23] ELECTRON SPIN RESONANCE ON INTERACTING DONORS IN SILICON PHYSICAL REVIEW, 1964, 134 (4A): : 1001 - +
- [28] SPIN RELAXATION OF CONDUCTIVITY ELECTRONS IN A3B5 COMPOUNDS OF THE P-TYPE ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1983, 84 (03): : 1170 - 1184
- [29] PHOTOCAPACITANCE DETERMINATION OF THE ENERGY-LEVELS IN P-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1088 - 1089
- [30] DEPENDENCE OF THE CONCENTRATION OF RADIATION DEFECTS IN P-TYPE SILICON ON THE RATE OF IRRADIATION WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 936 - 937