A NEW ANALYTICAL MODEL FOR THE GAAS-MESFET IN THE SATURATION REGION

被引：10

|

作者：

POUVIL, P

GAUTIER, JL

PASQUET, D

机构：

[1] ENSEA, Cergy, Fr

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

11

引用

收藏

页码：1215 / 1222

页数：8

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