CHARACTERIZATION OF BORON-IMPLANTED, LASER-ANNEALED SILICON

被引：0
|
作者：
YOUNG, RT
WHITE, CW
NARAYAN, J
CLARK, GJ
CHRISTIE, WH
机构：
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830
[2] OAK RIDGE NATL LAB,DIV ANALYT CHEM,OAK RIDGE,TN 37830
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C138 / C138
页数：1
相关论文
共 50 条
  • [31] STRUCTURE OF ROD DEFECTS IN BORON-IMPLANTED SILICON
    LAMBERT, JA
    DOBSON, PS
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (04): : 441 - 446
  • [32] Interstitial charge states in boron-implanted silicon
    Jung, MYL
    Kwok, CTM
    Braatz, RD
    Seebauer, EG
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
  • [33] METASTABLE ACCEPTOR CENTERS IN BORON-IMPLANTED SILICON
    DESOUZA, JP
    BOUDINOV, H
    APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3173 - 3175
  • [34] RAMAN MICROPROBE STUDY OF RECRYSTALLIZATION IN ION-IMPLANTED AND LASER-ANNEALED POLYCRYSTALLINE SILICON
    NAKASHIMA, S
    INOUE, Y
    MIYAUCHI, M
    MITSUISHI, A
    NISHIMURA, T
    FUKUMOTO, T
    AKASAKA, Y
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2611 - 2617
  • [35] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON
    CULLIS, AG
    WEBBER, HC
    CHEW, NG
    APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550
  • [36] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON
    BROWER, KL
    PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052
  • [37] TITANIUM SILICIDE FORMATION ON BORON-IMPLANTED SILICON
    CHOW, TP
    KATZ, W
    GOEHNER, R
    SMITH, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1914 - 1918
  • [38] RAMAN-SCATTERING FROM ULTRAHEAVILY-ION-IMPLANTED AND LASER-ANNEALED SILICON
    SHUKLA, AK
    JAIN, KP
    PHYSICAL REVIEW B, 1986, 34 (12): : 8950 - 8953
  • [39] RAMAN-SCATTERING IN VARIOUS PHASES OF ION-IMPLANTED, LASER-ANNEALED SILICON
    AVAKYANTS, LP
    GORELIK, VS
    OBRAZTSOVA, ED
    FIZIKA TVERDOGO TELA, 1990, 32 (05): : 1507 - 1510
  • [40] Observation of boron bound excitons in boron-implanted and annealed natural IIa diamonds
    Sternschulte, H
    Wahl, S
    Thonke, K
    Sauer, R
    Dalmer, M
    Ronning, C
    Hofsass, H
    APPLIED PHYSICS LETTERS, 1997, 71 (18) : 2668 - 2670
12345