ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5

被引：146
|
作者：
MIZOKAWA, Y [1 ]
IWASAKI, H [1 ]
NISHITANI, R [1 ]
NAKAMURA, S [1 ]
机构：
[1] OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1978年 / 14卷 / 02期
关键词：
D O I：
10.1016/0368-2048(78)85061-0
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
引用
收藏
页码：129 / 141
页数：13
相关论文
共 50 条
  • [31] Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system
    Ceccato, R.
    Dal, Maschio, R.
    Gialanella, S.
    Mariotto, G.
    Montagna, M.
    Rossi, F.
    Ferrari, M.
    Lipinska-Kalita, K.E.
    Ohki, Y.
    1600, American Institute of Physics Inc. (90):
  • [32] Nucleation of Ga2O3 nanocrystals in the K2O-Ga2O3-SiO2 glass system
    Ceccato, R
    Dal Maschio, R
    Gialanella, S
    Mariotto, G
    Montagna, M
    Rossi, F
    Ferrari, M
    Lipinska-Kalita, KE
    Ohki, Y
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2522 - 2527
  • [33] Energy band offsets at a Ga2O3(Gd2O3)-GaAs interface
    Lay, TS
    Hong, M
    Kwo, J
    Mannaerts, JP
    Hung, WH
    Huang, DJ
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 131 - 135
  • [34] Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications
    Lay, TS
    Hong, M
    Mannaerts, JP
    Liu, CT
    Kwo, J
    Ren, F
    Marcus, MA
    Ng, KK
    Chen, YK
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 78 - 84
  • [35] Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates
    Takane, Hitoshi
    Ando, Yuji
    Takahashi, Hidemasa
    Makisako, Ryutaro
    Ikeda, Hikaru
    Ueda, Tetsuzo
    Suda, Jun
    Tanaka, Katsuhisa
    Fujita, Shizuo
    Sugaya, Hidetaka
    APPLIED PHYSICS EXPRESS, 2023, 16 (08)
  • [36] Band offset and electrical properties of ErZO/ β-Ga2O3 and GZO/ β-Ga2O3 heterojunctions
    Shi, Ying-Li
    Huang, Dong
    Ling, Francis Chi-Chung
    APPLIED SURFACE SCIENCE, 2022, 576
  • [37] Proton Irradiation Effects in MOCVD Grown β-Ga2O3 and ε-Ga2O3 Thin Films
    Yue, Jian-Ying
    Li, Shan
    Qi, Song
    Ji, Xue-Qiang
    Wu, Zhen-Ping
    Li, Pei-Gang
    Tang, Wei-Hua
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (01) : 67 - 71
  • [38] Effect of annealing temperature of Ga2O3/V films on synthesizing β-Ga2O3 nanorods
    Yang, Zhaozhu
    Xue, Chengshan
    Zhuang, Huizhao
    Wang, Gongtang
    Chen, Jinhua
    Li, Hong
    Qin, Lixia
    Zhang, Dongdong
    Huang, Yinglong
    SOLID STATE COMMUNICATIONS, 2008, 148 (9-10) : 480 - 483
  • [39] Transparent Conductive Electrodes of β-Ga2O3/Ag/β-Ga2O3 Multilayer for Ultraviolet Emitters
    Kim, Si-Won
    Lee, Hyo-Ju
    Oh, Semi
    Noh, Beom-Rae
    Park, So-Yeon
    Im, Ye-Bin
    Son, Suyeon
    Song, Yong Won
    Kim, Kyoung-Kook
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (10) : 6328 - 6333
  • [40] Boostingtheperformanceofβ-Ga2O3/Sn-Ga2O3n-NhomojunctiondeepultravioletphotodetectorviainterfacialFermi-levelreversal
    Muzi LI
    Zhaoying XI
    Min LI
    Maolin ZHANG
    Shan LI
    Xueqiang JI
    Zhang ZHANG
    Lili YANG
    Weihua TANG
    Science China(Technological Sciences), 2025, 68 (05) : 286 - 293
12345