POLARIZATION DEPENDENT INTERBAND OPTICAL-ABSORPTION IN STRAINED NONSQUARE INGAAS/GAAS QUANTUM-WELL

被引：2
|
作者：
MICALLEF, J
LI, EH
WEISS, BL
机构：
[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 06期
关键词：
MODELING; SEMICONDUCTOR DEVICES AND MATERIALS; QUANTUM OPTICS;
D O I：
10.1049/el:19920332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coefficient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths.
引用
收藏
页码：526 / 528
页数：3
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