Application of strained InGaAs/GaAs quantum-well to laser emitting at 1054 nm

被引：2

作者：

Liu A. ^{[1
]}

Han W. ^{[2
]}

Huang M. ^{[2
]}

Luo Q. ^{[2
]}

机构：

[1] Department of Applied Physics, Chongqing University

[2] Chongqing Optoelectronics Research Institute

来源：

Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2010年 / 22卷 / 07期

关键词：

Chemical vapor deposition; InGaAs/GaAs strained quantum-well; Metal-organic; Semiconductor laser;

D O I：

10.3788/HPLPB20102207.1665

中图分类号：

学科分类号：

摘要：

An InGaAs/GaAs strained quantum-well was prepared by metal-organic chemical-vapor deposition(MOCVD) on GaAs substrate. The growth condition was chosen and a strained buffer layer(SBL) was adopted during the growth. A quantum-well emitting at 1054 nm was prepared laser with tilted waveguide. The strained QW laser exhibited threshold current of 9 mA and slope efficiency of 0.4 W/A (unused antireflection coating on the facets). The 1054 nm spectral width of the strained QW laser was 1.6 nm at an injection current of 50 mA. The experimental results indicate: The optimized growth condition and the used strained buffer layer are propitious to significantly improve the laser performance, and the application of strained InGaAs/GaAs quantum-well to laser emitting at 1054 nm is successful.

引用

页码：1665 / 1667

页数：2

共 10 条

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