DEEP TRAPPING CONTROLLED SWITCHING CHARACTERISTICS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：12

|

作者：

VANBERKEL, C

HUGHES, JR

POWELL, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4488 / 4495

页数：8

相关论文

共 50 条

[1] AMORPHOUS-SILICON THIN-FILM TRANSISTORS
TSUKADA, T
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 166 : 721 - 726
[2] AMORPHOUS-SILICON THIN-FILM TRANSISTORS
LIN, JL
LEE, SC
[J]. JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS, 1995, 18 (04) : 451 - 460
[3] AMORPHOUS-SILICON SUPERLATTICE THIN-FILM TRANSISTORS
TSUKUDE, M
AKAMATSU, S
MIYAZAKI, S
HIROSE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L111 - L113
[4] THE PHOTOSENSITIVITY OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
VANBERKEL, C
POWELL, MJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1393 - 1396
[5] VERTICAL AMORPHOUS-SILICON THIN-FILM TRANSISTORS
SHAW, JG
HACK, M
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) : 1576 - 1581
[6] STABILITY OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
POWELL, MJ
NICHOLLS, DH
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 2 - 4
[7] THE PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
POWELL, MJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) : 2753 - 2763
[8] Stable amorphous-silicon thin-film transistors
Meiling, H
Schropp, REI
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (20) : 2681 - 2683
[9] ANALYSIS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
HACK, M
SHUR, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1291 - 1294
[10] AMORPHOUS-SILICON SUPERLATTICE THIN-FILM TRANSISTORS
TSUKUDE, M
HATA, S
KOHDA, Y
MIYAZAKI, S
HIROSE, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 317 - 320

← 1 2 3 4 5 →