REDUCTION OF FORBIDDEN BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR

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作者：
ROGACHEV, AA
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SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 9卷 / 02期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：283 / +
页数：1
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