REDUCTION OF FORBIDDEN BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR

被引：0

作者：

ROGACHEV, AA

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 9卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：283 / +

页数：1

共 50 条

[21] ON THE SURFACE PHOTOEFFECT IN A HEAVILY DOPED SEMICONDUCTOR
DE, SS
GHOSH, AK
PATTANAYAK, TK
CANADIAN JOURNAL OF PHYSICS, 1991, 69 (06) : 732 - 737
[22] INCREASE OF OPTICAL WIDTH OF FORBIDDEN BAND OF LEAD SULFIDE DUE TO REDUCTION IN ELECTRON-DENSITY
ILIN, VI
PODVYAZNIKOVA, NK
RABIZO, OV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1896 - 1897
[23] DETERMINATION OF FORBIDDEN BAND WIDTH OF YELLOW LEAD MONOXIDE
HADJ, AB
BERGE, P
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1968, 266 (11): : 714 - &
[24] FORBIDDEN-BAND WIDTH OF PBSE AT HIGH TEMPERATURES
DEVYATKO.ED
SAAKYAN, VA
SOVIET PHYSICS SOLID STATE,USSR, 1968, 9 (09): : 2163 - +
[25] VARIATION OF THE FORBIDDEN-BAND WIDTH OF PBSE WITH PRESSURE
AVERKIN, AA
DOMBROVSKAYA, IG
MOIZHES, BY
SOVIET PHYSICS-SOLID STATE, 1963, 5 (01): : 66 - 68
[26] OPTICAL WIDTH OF FORBIDDEN BAND IN PBTE - PBS SOLUTIONS
KASIMOV, S
REGEL, AR
SUBASHIE.VK
SOVIET PHYSICS SOLID STATE,USSR, 1968, 9 (12): : 2885 - +
[27] PRESSURE COEFFICIENT OF FORBIDDEN-BAND WIDTH OF INSB
ABDUVAKH.KM
VOLKOV, AS
GALAVANO.VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1205 - &
[28] DISCRETE LEVELS IN FORBIDDEN BAND OF A DISORDERED SEMICONDUCTOR
BONCH-BRUEVICH, VL
SOVIET PHYSICS JETP-USSR, 1972, 34 (03): : 623 - +
[29] FORBIDDEN-BAND WIDTH AND THE COORDINATION NUMBERS OF ATOMS
BATSANOV, SS
INORGANIC MATERIALS, 1989, 25 (08) : 1091 - 1095
[30] INFLUENCE OF PRESSURE ON THE FORBIDDEN BAND WIDTH OF LEAD SULFIDE
SEMENOV, YA
SHILEIKA, AY
SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 252 - 253

← 1 2 3 4 5 →