POSTDEPOSITION ANNEALING EFFECTS IN RF REACTIVE MAGNETRON SPUTTERED INDIUM TIN OXIDE THIN-FILMS

被引：26
|
作者：
MARTINEZ, MA
HERRERO, J
GUTIERREZ, MT
机构：
[1] Instituto de Energías Renovables (CIEMAT), 28040 Madrid
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 26卷 / 04期
关键词：
D O I：
10.1016/0927-0248(92)90050-Y
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 (OMEGA-cm)-1. As-grown indium tin oxide films were annealed in vacuum and O2 atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9 X 10(-4)-OMEGA-cm and the figure of merit of 26700 (OMEGA-cm)-1.
引用
收藏
页码：309 / 321
页数：13
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