AL-DOPED GAAS CRYSTALS GROWN BY THE LEC METHOD

被引：0
|
作者：
DU, LX
MO, PG
JU, W
机构：
[1] Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050
来源：
MATERIALS LETTERS | 1991年 / 11卷 / 8-9期
关键词：
D O I：
10.1016/0167-577X(91)90201-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Preliminary results are presented on the effectiveness of Al-doping on the LEC growth of GaAs crystals with low dislocation densities. The doping technique and the effective segregation coefficient of Al in GaAs are reported and the effect of Al-doping on the reduction of dislocation density is briefly discussed.
引用
收藏
页码：277 / 280
页数：4
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