AL-DOPED GAAS CRYSTALS GROWN BY THE LEC METHOD

被引:0
|
作者
DU, LX
MO, PG
JU, W
机构
[1] Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050
关键词
D O I
10.1016/0167-577X(91)90201-G
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Preliminary results are presented on the effectiveness of Al-doping on the LEC growth of GaAs crystals with low dislocation densities. The doping technique and the effective segregation coefficient of Al in GaAs are reported and the effect of Al-doping on the reduction of dislocation density is briefly discussed.
引用
收藏
页码:277 / 280
页数:4
相关论文
共 50 条
  • [11] PHOTOLUMINESCENCE STUDIES ON SEMIINSULATING IN-DOPED DISLOCATION-FREE GAAS GROWN BY LEC METHOD
    NOTO, N
    KITAGAWARA, Y
    TAKAHASHI, T
    TAKENAKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05): : L394 - L396
  • [12] OXYGEN-RELATED DEEP CENTERS IN LEC GROWN GAAS CRYSTALS
    MARKOV, AV
    OSVENSKY, VB
    POLYAKOV, AY
    TISHKIN, MV
    OMELJANOVSKY, EM
    SOLID STATE COMMUNICATIONS, 1990, 73 (07) : 495 - 498
  • [13] Annealing studies on LEC grown Si undoped GaAs single crystals
    Durai, L
    Radhakrishnan, JK
    Thirumavalavan, M
    Inderpal
    Singh, H
    Singh, D
    Chander, J
    Kaur, J
    Joshi, SC
    Narula, RC
    Bagai, RK
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 304 - 307
  • [14] PRECIPITATE IDENTIFICATION IN LEC-GROWN SI-DOPED GAAS
    COCKAYNE, B
    MACEWAN, WR
    HOPE, DAO
    HARRIS, IR
    SMITH, NA
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (01) : 6 - 12
  • [15] Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method
    Ahmed, Sabah M.
    REVISTA INNOVACIENCIA, 2018, 6 (01):
  • [16] Characteristics of ZnO Nano-Crystals Grown on Al-doped ZnO Thin Films Deposited by Using the PLD Method
    Kim, Jong-Pil
    Bae, Jong-Seong
    Bang, Jeong-Kyu
    Yoon, Jang-Hee
    Won, Mi-Sook
    Lee, Byoung Seob
    Lee, Su-Yeon
    Jung, Ok-Sang
    Kim, Eundo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (01) : 378 - 382
  • [17] RECOMBINATION LUMINESCENCE IN AL-DOPED ZNS CRYSTALS
    BERLOV, PA
    BULANYI, MF
    KOVALENKO, AV
    KODZHESPIROV, FF
    YAKUNIN, AY
    INORGANIC MATERIALS, 1985, 21 (09) : 1269 - 1272
  • [18] PRECIPITATE IDENTIFICATION IN V-DOPED AND CR-DOPED LEC GROWN GAAS
    COCKAYNE, B
    MACEWAN, WR
    HARRIS, IR
    SMITH, NA
    JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 180 - 182
  • [19] UNDOPED SEMI-INSULATING GAAS CRYSTALS GROWN BY A MODIFIED LOW-PRESSURE LEC METHOD
    MO, PG
    FAN, XQ
    ZHOU, YD
    WU, J
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (11) : 1089 - 1095
  • [20] GROWTH-CELLS OF HEAVILY IN-DOPED LEC GAAS CRYSTALS
    FUJII, T
    NAKAJIMA, M
    FUKUDA, T
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) : 547 - 553