Low-Power and High-Frequency 14-nm In0.53Ga0.47As Vertical Rectangular Gate-All-Around MOSFETs

We present a high-mobility 14-nm channel length In0.53Ga0.47As vertical rectangular gate-all-around (GAA) MOSFET that we simulated with Silvaco TCAD in DevEdit 3D and Atlas for using these devices with low power. We obtained a threshold voltage V-th of 25mV; therefore, a subthreshold slope (SS) and drain-induced barrier lowering (DIBL) as low as 78 and 45mV/V have been demonstrated, indicating excellent interface quality and stability. A transconductance (g(m)) equal to 1.5ms/mu m, high frequency of 900GHz for a great InGaAs GAA, record high I-ON/I-OFF of over 2.5x10(6), and minimum I-OFF=0.21 pA/mu m have been obtained. These devices can be used for low-power logic and high-frequency applications.