DETERMINATION OF THE PARAMETERS OF NONRADIATIVE RECOMBINATION IN P-N STRUCTURES BY AN ELECTRON-PROBE

被引：0

作者：

KONNIKOV, SG

SOBOLEV, MM

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 05期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：572 / 573

页数：2

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[1] ELECTRON-PROBE INVESTIGATIONS OF NONRADIATIVE RECOMBINATION PROCESSES IN STRUCTURES MADE OF LIGHTLY DOPED GAAS
KONNIKOV, SG
KONSTANTINOV, AO
SOBOLEV, MM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 654 - 656
[2] CHARACTERISTICS OF BEHAVIOR OF CURRENT INDUCED BY AN ELECTRON-PROBE IN HIGH-VOLTAGE P-N STRUCTURES
KONNIKOV, SG
KOROLKOV, VI
NIKITIN, VG
SOBOLEV, MM
TOT, B
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (05): : 581 - 582
[3] CHARACTERISTIC FEATURES OF ELECTRON-PROBE ANALYSIS OF P-N STRUCTURES USING THE DEPENDENCE OF THE INDUCED CURRENT ON THE ACCELERATION VOLTAGE
SVERDLOV, MI
FILIPCHENKO, VY
CHERNOV, OL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 505 - 509
[4] ELECTRON-PROBE MICROANALYSIS OF MULTILAYER STRUCTURES
MATVIENKO, AN
SAVIN, DO
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[5] Effect of local nonradiative recombination on time-resolved electroluminescence of p-n junctions
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Melkonyan, DV
Moroz, NV
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 159 (02): : 523 - 534
[6] RECOMBINATION CURRENTS IN VARIABLE-GAP P-N STRUCTURES
SOBOLEVA, TI
KHOLODNOV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 685 - 686
[7] RADIATIVE RECOMBINATION REGION IN GAAS=SI P-N STRUCTURES
ASKAROV, PA
DMITRIEV, AG
TSARENKOV, BV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1075 - 1077
[8] SCANNING ELECTRON ACOUSTIC MICROSCOPY OF P-N STRUCTURES
ARISTOV, VV
GURTOVOI, VL
EREMENKO, VG
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 685 - 690
[9] DETERMINATION OF EQUILIBRIUM DIAGRAMS BY ELECTRON-PROBE MICROANALYSIS
SWINDELLS, N
JOURNAL OF THE INSTITUTE OF METALS, 1962, 90 (05): : 167 - &
[10] Differential methods for determination of deep-level parameters from recombination currents of p-n junctions
S. V. Bulyarskii
N. S. Grushko
A. V. Lakalin
Semiconductors, 1998, 32 : 1065 - 1068

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