ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS

被引：31
|
作者：
MCGREIVY, DJ [1 ]
机构：
[1] HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期
关键词：
D O I：
10.1109/T-ED.1977.18812
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：730 / 738
页数：9
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