SURFACE-ROUGHNESS MOBILITY MODEL FOR SILICON MOS-TRANSISTORS

A surface roughness mobility model for silicon MOS transistors is proposed. This mobility model, which predicts an exponential decrease of the mobility with the normal electric field and with the surface micro-roughness at the Si-SiO2 interface, provides a simple physical insight into the mobility attenuation al high electric fields. The model is successfully validated by comparison to mobility data obtained at high gate voltages and/or low temperature. Moreover, its capability to fit the mobility reduction with the interface micro-roughness reported by Ohmi et al. is also demonstrated and strongly supports its physical basis.