INVESTIGATIONS OF GOLD SURFACE-STATE ENERGY-LEVELS IN GOLD-DOPED MOS-TRANSISTORS

被引：2
|
作者：
MOGHAL, GR
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 47卷 / 02期
关键词：
Semiconductor devices; MIS;
D O I：
10.1080/00207217908938623
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of threshold voltage for conduction of both p- and n-channel gold-doped and non-gold-doped MOS (111) transistors with variation in temperature from 300 K to 80 K reveal two blocks of gold acceptor surface states. One is at 0. 12 eV from the conduction band edge and the other at 0. 1 eV from the valence band edge, and a further rise in surface state charge close to the valence band edge suggests another gold energy level near the band edge. Hall-effect measurements also confirm these gold energy levels near the band edge.
引用
收藏
页码：107 / 122
页数：16
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