Large spin splitting of metallic surface-state bands at adsorbate-modified gold/silicon surfaces

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作者
L. V. Bondarenko
D. V. Gruznev
A. A. Yakovlev
A. Y. Tupchaya
D. Usachov
O. Vilkov
A. Fedorov
D. V. Vyalikh
S. V. Eremeev
E. V. Chulkov
A. V. Zotov
A. A. Saranin
机构
[1] Institute of Automation and Control Processes,School of Natural Sciences
[2] Far Eastern Federal University,Institute of Solid State Physics
[3] St. Petersburg State University,Departamento de Física de Materiales and Centro Mixto CSIC
[4] Dresden University of Technology,UPV/EHU
[5] Institute of Strength Physics and Materials Science,Department of Electronics
[6] Tomsk State University,undefined
[7] Donostia International Physics Center (DIPC),undefined
[8] Centro de Física de Materiales CFM - Materials Physics Center MPC,undefined
[9] Facultad de Ciencias Químicas,undefined
[10] UPV/EHU,undefined
[11] Apdo. 1072,undefined
[12] Basque Country,undefined
[13] Vladivostok State University of Economics and Service,undefined
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摘要
Finding appropriate systems with a large spin splitting of metallic surface-state band which can be fabricated on silicon using routine technique is an essential step in combining Rashba-effect based spintronics with silicon technology. We have found that originally poor structural and electronic properties of the [inline-graphic not available: see fulltext] surface can be substantially improved by adsorbing small amounts of suitable species (e.g., Tl, In, Na, Cs). The resultant surfaces exhibit a highly-ordered atomic structure and spin-split metallic surface-state band with a momentum splitting of up to 0.052 Å−1 and an energy splitting of up to 190 meV at the Fermi level. The family of adsorbate-modified [inline-graphic not available: see fulltext] surfaces, on the one hand, is thought to be a fascinating playground for exploring spin-splitting effects in the metal monolayers on a semiconductor and, on the other hand, expands greatly the list of material systems prospective for spintronics applications.
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