INITIAL NUCLEATION OF PHOTO-CVD AMORPHOUS-SILICON BY PHOTODECOMPOSITION OF DISILANE

被引:0
|
作者
KAWASAKI, M
HAYASHI, K
TSUKIYAMA, Y
HADA, H
机构
关键词
D O I
10.1246/nikkashi.1987.1928
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1928 / 1933
页数:6
相关论文
共 50 条
  • [1] BORON DOPED HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PHOTO-CVD
    DE, A
    GHOSH, S
    RAY, S
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1992, 26 (1-2) : 137 - 147
  • [2] PHOSPHORUS DOPING PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY MERCURY SENSITIZED PHOTO-CVD
    SUZUKI, K
    KUROIWA, K
    TARUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2032 - 2036
  • [3] A NEW, LAMINAR-FLOW PHOTO-CVD METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS
    FURUKAWA, A
    IIDA, Y
    YAMAGUCHI, T
    HARADA, N
    NOZAKI, H
    KAMIMURA, T
    YANO, K
    ITO, H
    OKUMURA, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 665 - 668
  • [4] DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON CARBON-FILMS BY VACUUM-ULTRAVIOLET PHOTO-CVD
    FUJII, T
    YOSHIMOTO, M
    FUYUKI, T
    MATSUNAMI, H
    APPLIED SURFACE SCIENCE, 1994, 79-80 : 316 - 320
  • [5] HIGH-QUALITY AMORPHOUS-SILICON FILMS PREPARED BY ATMOSPHERIC-PRESSURE PHOTO-CVD
    KIM, WY
    KONAGAI, M
    TAKAHASHI, K
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 277 - 281
  • [6] HIGH-QUALITY AMORPHOUS-SILICON FILMS PREPARED BY ATMOSPHERIC-PRESSURE PHOTO-CVD
    KIM, WY
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L948 - L950
  • [7] ELECTRONIC MOBILITY GAP STRUCTURE AND THE NATURE OF DEEP DEFECTS IN AMORPHOUS-SILICON GERMANIUM ALLOYS GROWN BY PHOTO-CVD
    UNOLD, T
    COHEN, JD
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 23 - 26
  • [8] PHOTO-ELECTRONIC PROPERTIES OF CVD AMORPHOUS-SILICON
    SALAU, AM
    SOLID STATE COMMUNICATIONS, 1983, 48 (11) : 971 - 973
  • [9] EFFECT OF DEPOSITION PARAMETERS ON THE PROPERTIES OF AMORPHOUS-SILICON GERMANIUM ALLOY-FILMS GROWN BY THE PHOTO-CVD METHOD
    DE, A
    RAY, S
    BARUA, AK
    THIN SOLID FILMS, 1993, 229 (02) : 216 - 222
  • [10] INDUCTION TIME FOR NUCLEATION IN AMORPHOUS-SILICON FILMS PREPARED BY PLASMA CVD
    SUZUKI, M
    HIRAMOTO, M
    OGUIURA, M
    KAMISAKA, W
    HASEGAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1380 - L1383