ELECTRONIC PROPERTIES OF SI-SIO2 INTERFACE AS A FUNCTION OF OXIDE GROWTH CONDITIONS .2. FIXED CHARGE

被引：8

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作者：

PAUTRAT, JL

PFISTER, JC

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 11卷 / 02期

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D O I：

10.1002/pssa.2210110230

中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：669 / &

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